Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
Identifieur interne : 00FD83 ( Main/Repository ); précédent : 00FD82; suivant : 00FD84Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
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Abstract
We report on an indium-silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm-3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors</title><author><name sortKey="Adivarahan, V" uniqKey="Adivarahan V">V. Adivarahan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Tamulaitis, G" uniqKey="Tamulaitis G">G. Tamulaitis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Srinivasan, R" uniqKey="Srinivasan R">R. Srinivasan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J" uniqKey="Yang J">J. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Asif Khan, M" uniqKey="Asif Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham, New York 12110</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham, New York 12110</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0373835</idno><date when="2001-09-17">2001-09-17</date><idno type="stanalyst">PASCAL 01-0373835 AIP</idno><idno type="RBID">Pascal:01-0373835</idno><idno type="wicri:Area/Main/Corpus">010A19</idno><idno type="wicri:Area/Main/Repository">00FD83</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Carrier density</term><term>Experimental study</term><term>Gallium compounds</term><term>Hall mobility</term><term>III-V semiconductors</term><term>Indium</term><term>Photodetectors</term><term>Schottky barriers</term><term>Semiconductor doping</term><term>Silicon</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>7220M</term><term>6172V</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Gallium composé</term><term>Indium</term><term>Silicium</term><term>Semiconducteur III-V</term><term>Mobilité Hall</term><term>Photodétecteur</term><term>Dopage semiconducteur</term><term>Densité porteur charge</term><term>Barrière Schottky</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on an indium-silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×10<sup>17</sup> cm<sup>-3</sup> and the Hall mobility was up to 40 cm<sup>2</sup>/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors</s1></fA08><fA11 i1="01" i2="1"><s1>ADIVARAHAN (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>TAMULAITIS (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>SRINIVASAN (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>YANG (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>ASIF KHAN (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA11 i1="08" i2="1"><s1>GASKA (R.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29028</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronic Technology, Incorporated, 21 Cavalier Way, Latham, New York 12110</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>1903-1905</s1></fA20><fA21><s1>2001-09-17</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0373835</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on an indium-silicon co-doping approach for high-Al-content AlGaN layers. 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